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It is proposed that the anomalous infrared attenuation observed in neutron-irradiated compound semiconductors is the result of an induced local phase change to a metallic-like state. The total infrared scattering and absorption for a distribution of small metallic inhomogeneities in an otherwise uniform nonmetallic crystal is shown to produce attenuation which is proportional to the square of photon energy in the band gap. Application is made to fast-neutron-irradiated GaAs and agreement with reported data is found to be excellent. It is suggested that further investigation of the anomalous, structureless infrared attenuation observed for some irradiated compound semiconductors may lead to more quantitative understanding of spike phenomena in these materials.
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McNichols et al. (1967) studied this question.
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