Temperature Dependence of the Photoconductive Lifetime in N-Type Gallium Arsenide Diffused with Copper

Temperature dependence of the photoconductive lifetime has been studied in the temperature range 100°–360°K on n -type gallium arsenide partially compensated with copper. It is confirmed that in n -type gallium arsenide the electron lifetime is determined by the presence of two different levels: one is a recombination level at about the middle of the band gap and the other is an acceptor level near the valence band. The electron capture-cross-section of the acceptor level is estimated to be 10 -22 -2×10 -23 cm 2 . From the magnitude of the hole capture-cross-section, the recombination level is presumed to be a donor.