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Evidence for defect centers having an ionization energy at Ev+0.10 eV in melt-grown GaAs is given based on: (1) Hall-effect measurements on Cu-diffused crystals. (2) Residual 64Cu left in GaAs after extraction by indium. (3) Decrease in electron concentration of donor-doped crystals after annealing. The failure to observe the defect level in photoluminescence is discussed. The results suggest that Ga vacancies are present in clusters in melt-grown GaAs crystals.
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Fuller et al. (1967) studied this question.
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