Photoluminescence of lattice-matched In1−xGaxP1−yAsy layers on GaAs

Photoluminescence of undoped n-type and Zn-doped p-type lattice-matched liquid-phase epitaxy (LPE) In1−xGaxP1−yAsy layers on (100) GaAs has been studied at 4.2–290 K. Temperature dependences of the peak photon energy and the half-width of the band-to-band transitions of the undoped layer were measured. The half-width agreed well with the theoretical value of 1.8 kT. The band gap determined from the peak photon energy varied as 1.987−(7.284×10−4 T2)/(T+344) eV. Photoluminescence of the p-type layer showed the band-edge peak and another emission peak due to the recombination through Zn acceptors at 37–63 meV lower photon energy.