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The growth and laser properties of In1-xGaxP1-zAsz/ GaAs1-yPysingle heterojunction laser diodes are described. High-quality p-type In1-xGaxP1-zAszlayers are grown by liquid phase epitaxy (LPE) on n-type VPE GaAs1-yPysubstrates of compositiony = 0.32 - 0.40. Laser operation (77 K) of these quaternary-ternary heterojunctions is demonstrated at shorter wavelengths (Jₜₕ 6.2 × 10⁴A/cm2) than comparable GaAs1-yPyhomojunctions. The increase observed in threshold current (5x) betweeny = 0.38andy = 0.40GaAs1-yPysubstrates is attributed to the usual effect of EXapproachingEΓnear the direct-indirect transition. From the well-defined cavity mode structure observed on these hetero-junctions, data are obtained at relatively high energy on the index dispersion quantity{n - λ(dn/dλ)}, which increases monotonically with photon energy and provides a reference for the distinctly different behavior observed on N-doped GaAs1-yPy(hν ~ EΓ ~ EN).
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Coleman et al. (1975) studied this question.
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