What question did this study set out to answer?

Fabricate and evaluate short-wavelength semiconductor laser diodes and light-emitting diodes using vapor-grown In1-xGaxP p-n junctions.

June 1, 1972Applied Physics Letters

Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor-Grown p-n Junctions

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Authors

CNC. J. NueseUniversity of Illinois Urbana-Champaign ASA. G. SigaiPalo Alto Research Center JGJ. J. GannonCeraNova (United States)

Discussion

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Implication

Experimental study demonstrates coherent orange laser emission and electroluminescence in vapor-grown In1-xGaxP p-n junctions, highlighting viable short-wavelength semiconductor lasers.

Key Points

Fabricate and evaluate short-wavelength semiconductor laser diodes and light-emitting diodes using vapor-grown In1-xGaxP p-n junctions.
Fabricated p-n junction structures from vapor-grown In1-xGaxP alloys.
Measured coherent laser emission characteristics at 80 K and spontaneous electroluminescence properties at room temperature.
Achieved coherent orange laser emission at wavelengths as short as 6105 Å at 80 K with threshold current densities of 4000–6000 A/cm2.
Obtained external quantum efficiencies exceeding 0.1% for spontaneous orange and red emission at room temperature.

Cite This Study

Nuese et al. (1972) studied this question.

synapsesocial.com/papers/6a6f771a439bab0cabc2cd41 https://doi.org/10.1063/1.1654004

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June 1, 1972Applied Physics Letters

Orange Laser Emission and Bright Electroluminescence from In1−xGaxP Vapor-Grown p-n Junctions

View Full Paper

Ask AI

Bookmark

Authors

CNC. J. NueseUniversity of Illinois Urbana-Champaign ASA. G. SigaiPalo Alto Research Center JGJ. J. GannonCeraNova (United States)

Discussion

Member takes

Implication

Experimental study demonstrates coherent orange laser emission and electroluminescence in vapor-grown In1-xGaxP p-n junctions, highlighting viable short-wavelength semiconductor lasers.

Key Points

Fabricate and evaluate short-wavelength semiconductor laser diodes and light-emitting diodes using vapor-grown In1-xGaxP p-n junctions.
Fabricated p-n junction structures from vapor-grown In1-xGaxP alloys.
Measured coherent laser emission characteristics at 80 K and spontaneous electroluminescence properties at room temperature.
Achieved coherent orange laser emission at wavelengths as short as 6105 Å at 80 K with threshold current densities of 4000–6000 A/cm2.
Obtained external quantum efficiencies exceeding 0.1% for spontaneous orange and red emission at room temperature.

Cite This Study

Nuese et al. (1972) studied this question.

synapsesocial.com/papers/6a6f771a439bab0cabc2cd41 https://doi.org/10.1063/1.1654004

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