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A simple theoretical model for the trapping kinetics of one type of carrier in photoconductor containing several species of localized level, all of them broadened, is presented. Both steady-state behaviour and transient behaviour are described, and simple expressions for the time constants and amplitudes of the decay terms are obtained. Rose's model (1951) of an exponential distribution of traps plus a set of deep levels, advanced to explain a law of the type n varies as I v , where n is the carrier density, I the illumination intensity and 1 / 2 < nu <1, is explored in detail. A condition for its validity is obtained, and the characteristic transient behaviour predicted by the model is derived.
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Ridley et al. (1977) studied this question.
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