The position of the (1, 0, 0) minima in InP are determined from measurements in the region of interconduction band absorption. Direct transition electroluminescence in the In1−xGaxP alloys is observed over a range of alloys up to x = 0.8 and photon energies of up to 2.2 eV at 300°K and is consistent with the bandstructure determined for InP and that of GaP.
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Lorenz et al. (1968) studied this question.
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