Recombination Properties of Gold in Silicon

The presence of gold atoms in the silicon lattice decreases the lifetime of excess electrons and holes in p- and n-type material. The capture of electrons in p-type silicon occurs through the gold donor level with a capture cross section, σₙ₀, of 3.5×{}10^-15 cm² (at 300^∘{}K). This capture cross section varies as T^-2.5 between 200^∘{} and 500^∘{}K. In n-type silicon the electron capture cross section, σₙ₀, is 5×{}10^-16 cm² at 300^∘{}K and is temperature independent; the hole capture cross section, σₚ₀, is 1×{}10^-15 cm² at 300^∘{}K and varies as T^-4. The capture in this case occurs through the gold acceptor level.