Experimental characterization demonstrates tunable infrared luminescence in beryllium-implanted silicon-germanium alloys, suggesting opportunities for silicon-based optoelectronic devices.
We report the observation and characterization of luminescence in the wavelength range 1.1 μm<λ< 1.4 μm from silicon-rich silicon-germanium alloys, grown by molecular beam epitaxy, implanted with beryllium atoms. The luminescence originates with the radiative decay of an exciton bound to an isoelectronic impurity complex. The wavelength of this emission can be controlled by varying the Ge concentration.
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Modavis et al. (1990) studied this question.
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