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April 1, 1990Japanese Journal of Applied Physics

Optical Activation of Er3+ Implanted in Silicon by Oxygen Impurities

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PFP.N. FavennecUniversité de BordeauxHLH. L’HaridonUniversité de BordeauxDMD. MoutonnetOrange (France)

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Favennec et al. (1990) studied this question.

synapsesocial.com/papers/6a71ef8d78a11c550e0bdd59https://doi.org/10.1143/jjap.29.l524
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  1. 11.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxy1985 · 348 citations
  2. 2Photoluminescence decay of 1.54 μm Er 3+ emission in Si and III-V semiconductors1988 · 43 citations
  3. 3Interaction of Be and O in GaAs1989 · 33 citations
  4. 4Chromium gettering in GaAs by oxygen implantation1981 · 19 citations
  5. 51.54-μm luminescence of erbium-implanted III-V semiconductors and silicon1983 · 568 citations