Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1980Journal of Applied Physics

Properties of Zn-doped VPE-grown GaN. I. Luminescence data in relation to doping conditions

View Full Paper
Ask AI
Bookmark
Share

Authors

BḾB. ḾonemarLinköping UniversityOLO. LagerstedtLund UniversityHGH. P. GíslasonUniversity of Iceland

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Ḿonemar et al. (1980) studied this question.

synapsesocial.com/papers/6a6f783e439bab0cabc2cdc0https://doi.org/10.1063/1.327318
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Photoluminescence of Zn-implanted GaN1974 · 46 citations
  2. 2Luminescence of Zn- and Cd-doped GaN1972 · 152 citations
  3. 3Simple Theoretical Estimates of the Enthalpy of Antistructure Pair Formation and Virtual‐Enthalpies of Isolated Antisite Defects in Zinc‐Blende and Wurtzite Type Semiconductors1975 · 217 citations
  4. 4Fundamental energy gap of GaN from photoluminescence excitation spectra1974 · 806 citations