Strained N–Ga 0.7 Al 0.3 As/In x Ga 1- x As/GaAs modulation-doped structures were successfully fabricated. Also, a high concentration of two-dimensional electron gas (2DEG) (about 2×10 12 cm -2 ) was found to accumulate at heterointerfaces. Upon increasing the In composition in the InGaAs layer, the 2DEG concentration increased and the mobility decreased. Thus, a modulation-doped structure with In 0.23 Ga 0.77 As at room temperature has the lowest sheet resistance (about 500 ohms); this is two thirds of that for a conventional modulation-doped structure. The proposed structure is promising for field effect transistors with low channel resistances.
No takes yet. Share an insight, caveat, or question.
Okamoto et al. (1987) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: