Defect states in Si containing dislocation nets

Dc conductivity, Hall effect, and photoluminescence spectra are studied in heavily deformed samples containing a connected system of dislocation cell walls. The conclusion is made that, in deformed Si, empty and filled electron states 0.3 to 0.4 eV from the upper and lower edges of the band gap, respectively, are related to dislocation defects (kinks, jogs, constrictions, etc.). As a result, the Fermi level is pinned in the vicinity of localized states near the middle of the band gap. Therefore, dc conductivity along the dislocation system is absent.