Screw dislocation networks generated in Ge and Si by stage IV compression

Ge and Si single crystals were deformed into work hardening stage IV at high temperatures. The dislocation structure was investigated by TEM, and was found to consist mainly of hexagonal screw dislocation networks in the primary slip plane. Pre-stages of these were also seen as parallel 60° dislocations of two Burgers vectors in a secondary plane and as square networks. A mechanism is proposed for the formation of the hexagonal nets.