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The epitaxial vapor growth of GaAs in a closed tube containing iodine as a carrier gas is studied. Results obtained indicate clearly that the process is diffusion controlled. The transport rate is determined as functions of operations temperature T and of initial iodine concentration C 0 . The rate at a give C 0 has a maximum at T max which increase with increasing C 0 . Taking C 0 as the variable and fixing the temperature T , the rate has also a maximum. These facts can be explained satisfactorily on the bases of Fick's diffusion law and of the following chemical equilibrium: 2GaAs+GaI 3 3GaI+12As 4 .
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Okada et al. (1963) studied this question.
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