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Recent advances in the technology and understanding of ohmic contacts for a variety of III–V compound semiconductor material systems are reviewed. Special attention is focused on factors and critical issues involved in making low resistance and reliable ohmic contacts. The solid-phase regrowth mechanisms of key metallization systems are described. In addition, special techniques to improve the ohmic contacts are discussed. Finally, the reliability issues of ohmic contacts are addressed.
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Shen et al. (1992) studied this question.
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