Structure property relations of BST thin films

We report on the properties of thin BST films which were grown in a planetary multi-wafer MOCVD reactor which handles 5 six inch wafers simultaneously. The reactor is combined with a liquid delivery system which mixes the liquid precursors from three different sources: 0.35 molar solutions of Ba(thd)2 and Sr(thd)2 and a 0.4 molar solution of Ti(O-i-Pr)2(thd)2. Film growth on strongly (111)-textured Pt substrates is investigated within a wide parameter field. We focus on the properties of films with the composition Ba0.7Sr0.3TiO3 and thickness between 10 and 130 nm. Topics to be discussed include: the change of the texture of the BST films, which is (100) for deposition temperatures above 600°C and changes to a random orientation at lower temperature, and a comparison of planar films with films on structured substrates. The electrical properties, e.g., permittivity and leakage current, are discussed in relation to the microstructure.