Kinetics aspects of TiSi2 deposition without silicon consumption

Selectively deposited layers of TiSi2 have been obtained without Si substrate consumption using the TiCl4/SiH4 system diluted in H2 at 800 °C. For a given set of parameters, we show that TiSi2 formation uses Si coming from the substrate or from the gas phase, the principal parameters being the TiCl4/SiH4 ratio, the carrier gas, and gas mass transfer as the limiting mechanism of the reactions.