Titanium Disilicide in MOS Technology

The results of applying titanium silicide as low resistive (1.2 Ω/ ) gate and interconnect material, in short channel (1 μm) MOS technology are presented. Some aspects of silicide formation on mono- and polycrystalline silicon are discussed, together with the oxidation of the polycide layer (TiSi 2 on top of poly-Si). Plasma etching was successfully used for patterning of the polycide structure. A new approach has been taken, using ion implantation for the doping of the polysilicon layer. The different behaviour of arsenic and phosphorus doped polycide structure is observed. Finally, some results of electrical characterization of short channel MOS transistors are presented.