Magnetic tunnel junction structures comprising a ferromagnetic layer pinned by exchange biasing and a “free” ferromagnetic layer were prepared using dc-magnetron sputtering and patterned with conventional optical lithography. Structures were prepared, square and rectangular in shape, with various widths and lengths. It was observed that the magnetic properties of the free layer vary systematically with the size of the junction. In particular, the offset field of the free-layer magnetic hysteresis loop, as measured resistively, is controlled by a combination of magnetostatic and ferromagnetic coupling between the pinned and free layers.
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Moon et al. (1999) studied this question.
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