Vapour phase epitaxial layers of InP were deposited onto (111)A‐, (111)B‐, (001)‐, and (110)‐oriented GaAs substrates in the InP/PCl 3 /H 2 system using a close‐space technique. It is shown that the dependence of the layer quality on the substrate orientation is due to differences in the initial growth stages. Results on the growth rates and the electrical properties of the layers are reported.
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Wagner et al. (1981) studied this question.
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