Optical investigation of stress in the central GaAs layer of molecular-beam-grown AlxGa1−xAs-GaAs-AlxGa1−xAs structures

From the analysis of exciton splittings and shifts in the 2K absorption spectra of central GaAs layers in molecular-beam-grown AlxGa1−xAs-GaAs-AlxGa1−xAs structures, the magnitude and sign of the layer stress is deduced. Annealing at 850 °C has little influence on the layer stress although large changes in photoluminescence efficiency are observed. Comparisons with similar LPE-grown structures and MBE-grown double-heterostructure lasers are made.