We report on numerical simulations of the grain-boundary varistor behavior recently observed in -doped of high purity. The aim of this study is to disclose the nature of the nonlinear electrical properties of the grain boundaries in oxygen ion conductors. Under small voltages , the simulation shows a linear current-voltage relation dominated by the grain-boundary resistance. Under intermediate voltages , the simulation discloses a grain-boundary resistance breakdown and a nonlinear current-voltage relation. The increase of ionic charge carriers in the grain-boundary space-charge layer is the cause for the nonlinear behavior. Calculations are compared to experimental results.
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Meyer et al. (2005) studied this question.
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