A 1.5 to 0.87 µm wavelength optical upconversion device fabricated by wafer fusion is proposed and demonstrated. The device consists of an In0.53Ga0.47As/InP pin photodetector and a GaAs/AlGaAs light emitting diode, which were grown separately and wafer bonded together. The internal upconversion quantum efficiency is measured to be 18% at room temperature.
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Ban et al. (2003) studied this question.
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