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A new compact ECR plasma source has been developed. The characteristics of this source and it's applications are discussed. Irradiation by oxygen radicals O * for the oxidation during deposition process was found to produce high quality superconducting thin films with increased characteristic temperatures. Hydrogen radical H * beam cleaning of GaAs substrate surfaces was achieved at temperatures as low as 100°C.
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O’Keeffe et al. (1991) studied this question.
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