Nb-doped SrTiO3 (STO) thin films (Nb, 0<x<100 mol%) with a-axis orientation have been prepared on nondoped STO (100) and LaAlO3 (100) single crystals using a pulsed laser deposition technique. Solid-solution films are formed between STO and SrNbO3 without any impurity phases. Electrical conductivities of Nb-doped STO films can be controlled from 10−7 to 104 S/cm by changing the concentration of the doped Nb. Carrier concentration of the Nb-doped STO films also increases by increasing the Nb concentration.
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Tomio et al. (1994) studied this question.
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