August 15, 1990Journal of Applied Physics
Epitaxial relations between i n s i t u superconducting YBa2Cu3O7−x thin films and BaTiO3/MgAl2O4/Si substrates
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Implication
Experimental investigation reveals high-quality epitaxial YBCO film growth on double-buffered silicon substrates, indicating potential for integrating superconductors with silicon electronics.
Key Points
- To establish the epitaxial growth mechanisms and evaluate the superconducting properties of in situ YBa2Cu3O7−x thin films deposited on silicon substrates using BaTiO3/MgAl2O4 buffer layers.
- Fabricated in situ YBa2Cu3O7−x superconducting thin films on silicon substrates incorporating MgAl2O4 and BaTiO3 double-buffer layers.
- Characterized interfacial microstructure, crystalline defects, and epitaxial relationships across layers using transmission electron microscopy.
- Evaluated superconducting transport performance by measuring zero-resistance critical temperature and critical current density.
- Films reached a zero-resistance transition temperature (Tc0) up to 87 K and a critical current density (Jc) up to 6×10^4 A/cm^2 at 77 K.
- Transmission electron microscopy revealed that the BaTiO3 layer blocked most defect faults from the underlying MgAl2O4 layer, serving as a template for a single-crystal-like YBa2Cu3O7−x film free of secondary phases and grain boundaries.
- Observed slight degradation in transport performance was linked directly to residual thermal stress caused by mismatched thermal expansion coefficients.
Cite This Study
Hwang et al. (1990) studied this question.