Improved mobility of amorphous silicon thin-film transistors deposited by hot-wire chemical vapor deposition on glass substrates

High quality thin-film transistors (TFTs) with hydrogenated amorphous silicon, a-Si:H, deposited by hot-wire chemical vapor deposition as the active layer at growth rates above 20 Å/s, have been prepared using a standard, low-temperature process on glass substrates. These TFTs show a switching ratio above 3×106, a threshold voltage of 6 V, a subthreshold slope of 1.7 V/decade, and a field effect mobility of 0.1 cm2 V−1 s1.