A recently proposed XOR-based digital silicon photomultiplier (dSiPM) is compared against the OR-based counterpart. We show experimental data from a set of single-photon avalanche diode (SPAD) pixel arrays in 130-nm CMOS process with selectable OR tree and XOR tree for direct comparison. We demonstrate how XOR-based dSiPMs solve the limitation caused by monostable circuits and reach higher maximum count rates compared with optimized OR-based dSiPMs. The increased throughput of the SPAD array allows higher sampling rates for the digitization of the light signal enhancing dynamic range and linearity.
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Gnecchi et al. (2016) studied this question.
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