Highly Uniform Trilayer Molybdenum Disulfide for Wafer‐Scale Device Fabrication

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Molybdenum disulfide (MoS 2 ) is a layered semiconducting material with a tunable bandgap that is promising for the next generation nanoelectronics as a substitute for graphene or silicon. Despite recent progress, the synthesis of high‐quality and highly uniform MoS 2 on a large scale is still a challenge. In this work, a temperature‐dependent synthesis study of large‐area MoS 2 by direct sulfurization of evaporated Mo thin films on SiO 2 is presented. A variety of physical characterization techniques is employed to investigate the structural quality of the material. The film quality is shown to be similar to geological MoS 2 , if synthesized at sufficiently high temperatures (1050 °C). In addition, a highly uniform growth of trilayer MoS 2 with an unprecedented uniformity of ±0.07 nm over a large area (> 10 cm 2 ) is achieved. These films are used to fabricate field‐effect transistors following a straightforward wafer‐scale UV lithography process. The intrinsic field‐effect mobility is estimated to be about cm 2 V –1 s –1 and compared to previous studies. These results represent a significant step towards application of MoS 2 in nanoelectronics and sensing.