Answers are grounded in this paper and cite their sources.
Novel co-oligomers 1−3 composed of donor−acceptor units were developed as n-type semiconductors for OFETs. They have high electron affinity and the FET device of 1 showed high electron mobility (μe = 0.19 cm2/Vs) and low threshold voltage (VTh = 3V). Moreover, n-type light-emitting FETs (LFETs) were fabricated using 1−3.
No takes yet. Share an insight, caveat, or question.
Kono et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: