Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics

A molecular physics-based complementary model, which includes both field and current, is introduced to help resolve the E versus 1/E-model controversy that has existed for many years as to the true physics behind time-dependent dielectric breakdown (TDDB). It is shown here that either TDDB model can be valid for certain specified field, temperature, and molecular bonding-energy ranges. For bond strengths <3 eV, the bond breakage rate is generally dominated by field-enhanced thermal processes and the E model is valid. For bond strengths >3 eV, the bond breakage must be hole catalyzed by current-induced hole injection and capture. Under these conditions, the TDDB physics is described well by the 1/E model.