A new high-performance undoped In/sub 0.53/Ga/sub 0.47/As metal-semiconductor-metal photodetector (MSM-PD) with an undoped InP barrier-enhancement layer is reported. The layers were grown by the low-pressure metalorganic vapor-phase epitaxy (LP-MOVPE) technique. The main features of this device include: a very low dark current of less than 60 nA, (100*100) mu m/sup 2/, at 1.5 V; a short risetime of 30 ps at 6 V; and a high responsivity of 0.42 A/W for lambda =1.3 mu m.>
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Shi et al. (1992) studied this question.
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