Over 245 mW 1.3 μm buried ridge stripe laser diodes on n-substrate fabricated by the reactive ion beam etching technique

1.3 μm GaInAsP/InP buried ridge stripe lasers have been developed using the reactive ion beam etching process for the realization of the mesa stripe and two-step metalorganic vapor phase epitaxy technique for the layers growth. A cw output power over 245 mW has been achieved in 500-μm-long lasers with front and rear facet reflectivities of 5% and 95%, respectively. Transverse-mode stability at high output power (100 mW) has been demonstrated. In addition, high reliability has been shown in preliminary high-power aging experiments.