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Color-center formation in F-doped, OH-free synthetic SiO(2) glasses by irradiation with F(2) excimer lasers (157 nm) was examined as a function of the F content. The concentration of photoinduced E(') centers was reduced to approximately 1/20 by 1 mol.% F(2) doping and remained almost constant on further doping to 7.3 mol. %. The absorption edge was considerably shifted to a lower wavelength (157.4 nm -->153 nm for a 5-mm-thick sample) by 1-mol. % doping and decreased only slightly on further doping. The intensities of the Raman bands that are due to three- and four-membered ring structures were significantly reduced by 1-mol. % F doping. These results strongly suggest that elimination of strained Si-O-Si bonds by F doping plays a central role in the improvement of radiation resistance of SiO(2) glasses to F(2) laser light.
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Hosono et al. (1999) studied this question.
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