A direct-detection 800 nm GaAs monolithically integrated photoreceiver is reported with a photocurrent gain of 200 and a 1 GHz bandwidth capable of driving a 50 Ω load with IV peak pulses. The integrated NPN photodiode has over 7GHz bandwidth and requires no modifications to the ion-implanted GaAs MESFET process. The 200GHz gain-bandwidth product and 3200 V/W responsivity are among the highest reported for similar receivers.
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Wojtczuk et al. (1987) studied this question.
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