High external efficiency (36%) 5-μm mesa isolated GaAs quantum well laser by organometallic vapor phase epitaxy

High external power efficiencies of 36% are obtained from 5-μm mesa isolated graded-index separate-confinement heterostructure single quantum well lasers grown by organometallic vapor phase epitaxy. Threshold currents of 21 mA are reported for a 5×96 μm cavity laser with differential quantum efficiencies of as high as 80% at 6 mW/facet. In addition, high facet power densities of 13 mW/μm are reported giving single ended output powers of 65 mW from 5-μm uncoated facets. Even higher power densities of 20 mW/μm are observed for 1-μm mesa stripe lasers before probe damage occurred.