Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
October 1, 1973IEEE Journal of Quantum Electronics

Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser

View Full Paper
Ask AI
Bookmark
Share

Authors

YNYoshio NishimuraAjinomoto (Japan)YNYoshiharu NishimuraNikkei Business Publications (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Nishimura et al. (1973) studied this question.

synapsesocial.com/papers/6a6fbc9d5d37378ac1dccbf5https://doi.org/10.1109/jqe.1973.1077406
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1GaAs–Al<i>x</i>Ga1−<i>x</i>As Double Heterostructure Lasers—Effect of Doping on Lasing Characteristics of GaAs1972 · 97 citations
  2. 2Decrease in Spontaneous Emission at the Onset of Lasing in Semiconductors1971 · 10 citations
  3. 3Theory of an Optical Maser1964 · 1,721 citations
  4. 4Variation of spontaneous emission with current in GaAs homostructure and double-heterostructure injection lasers1973 · 23 citations
  5. 5Properties of Spontaneous and Stimulated Emission in GaAs Junction Lasers. I. Densities of States in the Active Regions1970 · 86 citations