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An integrated p-i-n/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate A four-layered structure allows separate optimization of both active devices. Owing to the good performances and high reliability of individual components, the sensitivity of these monolithic photoreceivers is evaluated as -29 dBm at 560 Mb/s (10/sup -9/ bit error rate). Remarkable stability over time is exhibited.>
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Renaud et al. (1988) studied this question.
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