Key points are not available for this paper at this time.
The buried-heterostructure, in which the quaternary active layer is completely surrounded by InP crystal, has been realized in 1.5 µm region by low temperature liquid phase epitaxial growth. Low threshold current of 25 mA under CW operation was achieved at 26°C. This is the lowest value so far reported on the InP/GaInAsP laser in 1.5 µm wavelength region.
Nagai et al. (1980) studied this question.