Excitonic energies and inhomogeneous line broadening effects in InAlAs/InGaAs modulator structures

The exciton problem in the In0.52Al0.48As/In0.53Ga0.47As quantum well in the presence of static transverse electric field is studied. We report results on variation of exciton size, binding energies, and emission energies as a function of electric field and well size. Inhomogeneous line broadening of exciton lines due to interface roughness and alloy disorder is also calculated. Alloy disorder in the well and barrier regions is found to be very important and its control may be critical in the performance of this system as a high efficiency modulator.