Answers are grounded in this paper and cite their sources.
We present the results of self-consistent variational calculations for the energy levels and wave functions of modulation-doped InP-In(Ga)As heterojunctions. With the variational wave functions we calculate the electron scattering by alloy disorder. Retaining the bulk In(Ga)As value (∼0.6 eV) for the alloy disorder potential the mobility limited by alloy disorder is only ∼2×105 cm2/Vs for ne ∼3×1011 cm−2.
No takes yet. Share an insight, caveat, or question.
G. Bastard (1983) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: