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The low temperature mobility is calculated in a two-dimensional system at a GaAs/Al x Ga 1- x As heterojunction. Scattering mechanisms are assumed to be the Coulomb scattering from ionized donors in the Al x Ga 1- x As layer, interface roughness, and scattering caused by alloy disorder present in the Al x Ga 1- x As layer. The calculated mobility for the Coulomb scattering explains recent experimental results. The interface roughness and the alloy scattering can play a role at high electron concentrations (∼10 12 cm -2 ).
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Tsuneya Ando (1982) studied this question.
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