New laterally selective growth technique by metalorganic chemical vapor deposition

Laterally selective growth of III-V compounds has been successfully demonstrated by metalorganic chemical vapor deposition. This was achieved by using a specially designed growth chamber and susceptor that allows the substrate to move with respect to a stationary GaAs or Si mask. We have used this technique to selectively deposit GaAs1−xPx with different values of x and a GaAs-GaAsP superlattice on a single GaAs substrate. We have also selectively grown multiple color light-emitting diodes on a GaAs substrate.