Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
August 1, 1984Applied Physics LettersOpen Access

Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

JSJun ShibataAichi Institute of TechnologyINIchiro NakaoPanasonic (Japan)YSYoichi SasaiPanasonic (Japan)

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Shibata et al. (1984) studied this question.

synapsesocial.com/papers/6a6fbd1ae5469ee92be0974bhttps://doi.org/10.1063/1.95205
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Heterostructure bipolar transistors and integrated circuits1982 · 919 citations
  2. 2Monolithic integration of a very low threshold GaInAsP laser and metal-insulator-semiconductor field-effect transistor on semi-insulating InP1982 · 36 citations
  3. 3Monolithic integration of an AlGaAs/GaAs DH LED with a GaAs FET driver1982 · 15 citations
  4. 4Integrated In 0.53 Ga 0.47 As p-i-n f.e.t. photoreceiver1980 · 98 citations
  5. 5Recent developments in monolithic integration of InGaAsP/InP optoelectronic devices1982 · 30 citations