Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 1, 1982Proceedings of the IEEE

Heterostructure bipolar transistors and integrated circuits

View Full Paper
Ask AI
Bookmark
Share

Authors

HKH. KroemerUniversity of California, Santa Barbara

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

H. Kroemer (1982) studied this question.

synapsesocial.com/papers/6a7068a28031ec7bb1dc5153https://doi.org/10.1109/proc.1982.12226
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1The method of estimating delay in switching circuits and the figure of merit of a switching transistor1964 · 62 citations
  2. 2Modulation-doped MBE GaAs/n-AlxGa1-xAs MESFETs1981 · 38 citations
  3. 3Design and fabrication of high-speed GaAlAs/GaAs heterojunction transistors1980 · 31 citations
  4. 4The use of GaAs—(Ga, Al)As heterostructures for FET devices1980 · 19 citations