InGaAsP/InP phototransistors have been fabricated using the liquid phase epitaxy technique. In spite of the early stage of development, the fabricated detectors exhibited a current gain of more than 103 and rise time of about 50 nsec. With further development, InGaAsP/InP phototransistors will become promising detectors for optical communication systems in the 1.0–1.7-μm spectral region.
No takes yet. Share an insight, caveat, or question.
Tobe et al. (1980) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: