Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 15, 1978Applied Physics Letters

GaInAsP/InP avalanche photodiodes

View Full Paper
Ask AI
Bookmark
Share

Authors

CHC. E. HurwitzMIT Lincoln LaboratoryJHJ. J. HsiehPowertech Technology (Taiwan)

Discussion

Loading...

Member takes

Overview

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hurwitz et al. (1978) studied this question.

synapsesocial.com/papers/6a6fbd735d37378ac1dccdc2https://doi.org/10.1063/1.90095
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i>/InP heterojunction photodiodes1977 · 47 citations
  2. 21500-h continuous cw operation of double-heterostructure GaInAsP/InP lasers1977 · 92 citations
  3. 3Small-area, high-radiance c.w. InGaAsP l.e.d.s emitting at 1.2 to 1.3 μm1977 · 59 citations
  4. 4Signal and noise response of high speed germanium avalanche photodiodes1966 · 158 citations
  5. 5Growth and Characterization of InP-lnGaAsP Lattice-Matched Heterojunctions1973 · 96 citations