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The photoelectronic properties of quaternary alloy heterojunction photodiodes made of liquid-phase-grown In0.88Ga0.12As0.25P0.75 layers deposited onto p-doped InP substrates have been investigated experimentally and analytically. It is shown that a typical photodiode with a peak responsivity of 0.26 A/W (at 1.02 μm) has a quantum efficiency of ∼22% at 1.06 μm.
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Wieder et al. (1977) studied this question.
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